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VOLUME 53 (1991) | ISSUE 4 | PAGE 205
Magnetically stimulated acceleration of the change in structure of defects in semiconductors
A new phenomenon involving the acceleration of the kinetics of photostimulated and injection-stimulated changes in the structure of defects as a result of application of a transverse magnetic field has been observed. The magnetic field of strength Η ~ 6-15 kOe was found to accelerate the decomposition of the donor-acceptor pair (Cr,+ В ~ )0 and to lead to the appearance of a new, deep impurity center N~ in the/ьгуре Si<Cr) andp-type Si{Ni) crystals as a result of illumination by a superlow-energy light from the impurity absorption region, and as a result of injection of minority carriers (electrons).