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VOLUME 36 (1982) | ISSUE 9 | PAGE 328
Anderson transition in the excitonimpurity band In silicon
An Anderson transition is observed in the exciton-impurity band (EIB) in Si:P with donor concentration nD = я°~1.5Х1017ст~3. The transition is accompanied by a sharp rearrangement of the recombination-radiation spectrum of EIB with increasing nD in the region nD ~n° due to increased exciton mobility and a change in the polarization of radiation in a magnetic field.