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VOLUME 32 (1980) | ISSUE 5 | PAGE 370
Charge-carrier transport anisotropy in the inversion channels on high-index silicon surfaces
Scattering anisotropy of holes which is attributable to one-dimensional scatterers, was observed in the inversion quantum channels on high-index silicon surfaces. It is shown that the surface microscopic irregularities, which are randomly distributed in the perpendicular direction to the disorientation line of the surface, can serve as these scatterers.