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| VOLUME 123 (2026) | ISSUE 3 | PAGE 168 |
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Non-volatile stochastic photonic element with memory based on chalcogenide material
A. Nevzorova, A. Golikovb,c, D. Gneushevb, A. Burtsevd, V. Mikhalevskyd, A. Kiselevd, V. Ionind, N. Eliseevd, V. Svetukhinf, P. Lazarenkob,g, V. Kovalyuka,e, A. Lotind,g,h, A. Kolobovg, G. Goltsmane,i
aLaboratory of Photonic Gas Sensors, University of Science and Technology MISIS, 119049 Moscow, Russia bNational Research University of Electronic Technology, 124498 Zelenograd, Russia cDepartment of Physics, Moscow Pedagogical State University, 119435 Moscow, Russia dNational Research Centre "Kurchatov Institute", 123098 Moscow, Russia eNational Research University Higher School of Economics, 101000 Moscow, Russia fScientific-Manufacturing Complex "Technological Centre", 124498 Zelenograd, Russia gHerzen University, 191186 St. Petersburg, Russia hMendeleev University of Chemical Technology, 125480 Moscow, Russia iGroup of Quantum Photonic Integrated Circuits, Russian Quantum Center, 143025 Skolkovo, Russia
Abstract
This paper demonstrates a special stochastic operation mode of a photonic element with a thin GeTe film deposited at a silicon nitride waveguide. As opposed to traditional deterministic switching between stable states, it has been shown that identical pump laser pulses cause a stochastic change in the transmission coefficient. The discovered effect opens up new possibilities for constructing compact and energy-efficient entropy sources and stochastic computing units directly within integrated photonic circuits. |