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VOLUME 77 (2003) | ISSUE 6 | PAGE 362
Anomalous spin-orbit effects in a strained InGaAs/InP quantum well structure
PACS: 72.25.Rb, 73.20.-r, 73.21.Fg, 73.63.Hs
Abstract
There currently is a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials with large spin-orbit coupling is therefore important. We report results of a study of spin-orbit effects in a strained InGaAs/InP quantum well. The spin-orbit relaxation time, determined from the weak antilocalization effect, was found to depend non-monotonically on gate voltage. The spin orbit scattering rate had a maximum value of 5• 1010 s-1 at an electron density of n=3• 1015 m-2. The scattering rate decreased from this for both increasing and decreasing densities. The smallest measured value was approximately 109 s-1 at an electron concentration of n=6• 1015 m-2. This behavior could not be explained by neither the Rashba nor the bulk Dresselhaus mechanisms but is attributed to asymmetry or strain effects at dissimilar quantum well interfaces.