Room-temperatuie coulomb fingerprints in thin films of Cu+SiO2 composite material
Gurevich S.A., Horenko V.V., Kupriyanov L.Yu., Kupriyanov M.Yu., Vasilevskaya T.N., Vyshenski S.V., Zarayskaya T.A.
We study the гоom-temperature electrical properties of thin (~ 200 nm) S1O2 films with inclusions of Cu globules with radius ~ 1 nm and separation ~ 20 nm. Current-voltage curves taken across the film in different experimental arrangements show "fingerprints" that are fully reproducible within each setup. We observe multiple peaks with a height of ~ 2 pA against the Ohm's-law background. The typical peak width is consistent with single-electron recharging of Cu globules. We interpret these data as selfselection of energetically favorable quasi-ID chains of globules, along which the current is mainly concentrated. PACS: 73.50.-h
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![](/ps/985/article_14999_800_head.png "<b>We study the гоom-temperature electrical properties of thin (~ 200 nm) S1O2 films with inclusions of Cu globules with radius ~ 1 nm and separation ~ 20 nm. Current-voltage curves taken across the film in different experimental arrangements show "fingerprints" that are fully reproducible within each setup. We observe multiple peaks with a height of ~ 2 pA against the Ohm's-law background. The typical peak width is consistent with single-electron recharging of Cu globules. We interpret these data as selfselection of energetically favorable quasi-ID chains of globules, along which the current is mainly concentrated.</b> <b>PACS: 73.50.-h</b>")