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VOLUME 67 (1998) | ISSUE 2 | PAGE 118
Weak antilocalization in a 2D electron gas with the chiral splitting of the spectrum
Motivated by the recent observation of the metal-insulator transition in Si-MOSFETs we consider the quantum interference correction to the conductivity in the presence of the Bychkov-Rashba spin splitting. For a small splitting, a crossover from the localizing to antilocalizing regime is obtained. The antilocalization correction vanishes however in the limit of a large separation between the chiral branches. The relevance of the chiral splitting for the 2D electron gas in Si-MOSFETs is discussed.